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A Combined Tem/Rheed, Sem/Cl Study Of Epitaxial Gan

  • P. D. Brown (a1), D. M. Tricker (a1), Y. Xin (a2), T. S. Chengt (a3), C. T. Foxont (a3), D. Evanst (a4), S. A. Galloway (a5), J. Brock (a2) and C. J. Humphreys (a1)...

Abstract

Epitaxial GaN grown by MBE has been characterised using the combined techniques of scanning electron microscopy / cathodoluminescence, reflection high energy electron diffraction (RHEED), and conventional transmission electron microscopy. Variations in spatial and spectral distributions of luminescence can arise due to embedded cubic inclusions within the hexagonal GaN matrix. The strong effect of doping on the crystallinity of the GaN deposit is illustrated, as determined by RHEED in a TEM.

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A Combined Tem/Rheed, Sem/Cl Study Of Epitaxial Gan

  • P. D. Brown (a1), D. M. Tricker (a1), Y. Xin (a2), T. S. Chengt (a3), C. T. Foxont (a3), D. Evanst (a4), S. A. Galloway (a5), J. Brock (a2) and C. J. Humphreys (a1)...

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