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Combined Structural and Optical Assessment of CVD Grown 3C-SiC/Si

  • Z. C. Feng (a1), C. C. Tin (a2), K. T. Yue (a3), R. Hu (a2), J. Williams (a2), S. C. Liew (a1), Y. G. Foo (a1), S. K. L. Choo (a1), W. E. Ng (a1) and S. H. Tang (a1)...

Abstract

A combined structural and optical assessment of cubic (3C-) SiC thin films grown on Si (100) substrates by chemical vapor epitaxy (CVD) is presented. The CVD growth was performed at both atmospheric and low (100 Torr) pressure, using a vertical reactor. The CVD-grown 3C-SiC films with different growth time were characterized by X-ray diffraction, Raman scattering and Fourier transform infrared (FTIR) spectroscopy to be single crystalline with a high degree of crystal perfection. The film thickness was determined from FTIR spectra. Variations of X-ray, FTIR and Raman spectra with different growth conditions and film thicknesses are studied comparatively. Related problems are discussed.

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