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Combined Excitation Emission Spectroscopy of Europium ions in GaN and AlGaN Films

Published online by Cambridge University Press:  01 February 2011

V. Dierolf ,
Z. Fleischman ,
C. Sandmann ,
A. Wakahara ,
T. Fujiwara ,
C. Munasinghe  and
A. Steckl
V. Dierolf
Affiliation:
Department of Physics and Center for Optical Technologies, Lehigh University, Bethlehem, PA 18015, USA
Z. Fleischman
Affiliation:
Department of Physics and Center for Optical Technologies, Lehigh University, Bethlehem, PA 18015, USA
C. Sandmann
Affiliation:
Department of Physics and Center for Optical Technologies, Lehigh University, Bethlehem, PA 18015, USA
A. Wakahara
Affiliation:
Toyohashi University of Technology
T. Fujiwara
Affiliation:
Toyohashi University of Technology
C. Munasinghe
Affiliation:
Nanoelectronics Laboratory, University of Cincinnati, Cincinnati, OH 45221-0030
A. Steckl
Affiliation:
Nanoelectronics Laboratory, University of Cincinnati, Cincinnati, OH 45221-0030
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Abstract

Site-selective combined excitation emission spectroscopy studies have been performed on Eu-doped GaN and numerous sites have been identified. Relative numbers and broadening of these peaks has been investigated for different growth conditions and for increasing AL content of the AlxGa1-xN alloy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 866 , 2005 , V3.6
Copyright
Copyright © Materials Research Society 2005

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References

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