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Combinatrial study for Mg-Si thin films fabricated by RF co-sputtering with Mg and Si targets

  • Y. Morita (a1), Y. Hayashi (a1), H. Tsuchiura (a2) and M. Nishitani (a1)

Abstract

Mg-Si thin films were systematically studied using combinatorial approach by co-sputtering with Mg and Si targets. Single phase of Mg2Si appeared around the stoichiometric composition region, and in Mg-rich region (Mg/Si>4) Mg2Si and Mg phases coexisted. The transition of electrical conduction type from n-type to p-type occurred near the stoichiometric composition region where the strongest peak of Mg2Si appeared in the XRD patterns and the Raman scattering spectra. The p-type conduction was observed in Mg-poor region near the stoichiometric composition region. The results of first principle calculation suggest that Mg vacancy may cause p-type conduction.

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Keywords

Combinatrial study for Mg-Si thin films fabricated by RF co-sputtering with Mg and Si targets

  • Y. Morita (a1), Y. Hayashi (a1), H. Tsuchiura (a2) and M. Nishitani (a1)

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