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Combinatorial Chemical Vapor Deposition of Metal Silicate Films Using Tri(t -butoxy) silanol and Anhydrous Metal Nitrates

Published online by Cambridge University Press:  01 February 2011

Lijuan Zhong ,
Fang Chen ,
Stephen A. Campbell  and
Wayne L. Gladfelter
Lijuan Zhong
Affiliation:
Deptartment of Chemistry, University of Minnesota, Minneapolis, MN 55455, U.S.A.
Fang Chen
Affiliation:
Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN 55455, U.S.A.
Stephen A. Campbell
Affiliation:
Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN 55455, U.S.A.
Wayne L. Gladfelter
Affiliation:
Deptartment of Chemistry, University of Minnesota, Minneapolis, MN 55455, U.S.A.
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Abstract

A modified low-pressure chemical vapor deposition reactor was used to create compositional spreads of MO2/SiO2 films (M = Hf, Zr and Sn) using tri(t-butoxy) silanol and anhydrous metal nitrates of hafnium, zirconium and tin at temperatures below 250 °C. The compositional spreads formed by this process were characterized by ellipsometry and Rutherford backscattering spectrometry. A survey of possible reactions involved in the deposition is included.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 804: Symposium JJ – Combinatorial and Artificial Intelligence Methods in Materials Science II , 2003 , JJ2.3
Copyright
Copyright © Materials Research Society 2004

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References

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