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Combinatorial Chemical Vapor Deposition of Metal Silicate Films Using Tri(t -butoxy) silanol and Anhydrous Metal Nitrates

  • Lijuan Zhong (a1), Fang Chen (a2), Stephen A. Campbell (a2) and Wayne L. Gladfelter (a1)

Abstract

A modified low-pressure chemical vapor deposition reactor was used to create compositional spreads of MO2/SiO2 films (M = Hf, Zr and Sn) using tri(t-butoxy) silanol and anhydrous metal nitrates of hafnium, zirconium and tin at temperatures below 250 °C. The compositional spreads formed by this process were characterized by ellipsometry and Rutherford backscattering spectrometry. A survey of possible reactions involved in the deposition is included.

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Combinatorial Chemical Vapor Deposition of Metal Silicate Films Using Tri(t -butoxy) silanol and Anhydrous Metal Nitrates

  • Lijuan Zhong (a1), Fang Chen (a2), Stephen A. Campbell (a2) and Wayne L. Gladfelter (a1)

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