Combinatorial Chemical Vapor Deposition of Metal Silicate Films Using Tri(t -butoxy) silanol and Anhydrous Metal Nitrates
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- DOI: https://doi.org/10.1557/PROC-804-JJ2.3
- Published online by Cambridge University Press: 01 February 2011
Abstract
A modified low-pressure chemical vapor deposition reactor was used to create compositional spreads of MO2/SiO2 films (M = Hf, Zr and Sn) using tri(t-butoxy) silanol and anhydrous metal nitrates of hafnium, zirconium and tin at temperatures below 250 °C. The compositional spreads formed by this process were characterized by ellipsometry and Rutherford backscattering spectrometry. A survey of possible reactions involved in the deposition is included.
Copyright
COPYRIGHT: © Materials Research Society 2004
References
Combinatorial Chemical Vapor Deposition of Metal Silicate Films Using Tri(t -butoxy) silanol and Anhydrous Metal Nitrates
-
- DOI: https://doi.org/10.1557/PROC-804-JJ2.3
- Published online by Cambridge University Press: 01 February 2011
