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Columnar Epitaxy of CoSi2 on Si(111), Si(100), and Si(110)

  • R.W. Fathauer (a1), C.W. Nieh (a2), Q.F. Xiao (a3) and Shin Hashimoto (a3)


Epitaxial columns of CoSi2 are produced when Si and Co are codeposited on heated Si substrates. These columns are surrounded by epitaxial Si with defect densities below the detection limit of transmission electron microscopy. This phenomenon has been studied as functions of substrate temperature, Si:Co ratio, deposition rate, thickness of the epitaxial layer, and substrate orientation. These data suggest that the distribution of columns is dictated by the nucleation of CoSi2 islands during the initial stages of the deposition.



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14 Fathauer, R.W. and Grunthaner, F.J., unpublished.


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