Skip to main content Accessibility help
×
Home

Columnar Epitaxy of CoSi2 on Si(111), Si(100), and Si(110)

  • R.W. Fathauer (a1), C.W. Nieh (a2), Q.F. Xiao (a3) and Shin Hashimoto (a3)

Abstract

Epitaxial columns of CoSi2 are produced when Si and Co are codeposited on heated Si substrates. These columns are surrounded by epitaxial Si with defect densities below the detection limit of transmission electron microscopy. This phenomenon has been studied as functions of substrate temperature, Si:Co ratio, deposition rate, thickness of the epitaxial layer, and substrate orientation. These data suggest that the distribution of columns is dictated by the nucleation of CoSi2 islands during the initial stages of the deposition.

Copyright

References

Hide All
1 Lin, T.L., Fathauer, R.W., Grunthaner, P.J., and d’Anterroches, C., Appl. Phys. Lett. 52, 804 (1988).
2 Tung, R.T. and Batstone, J.L., Appl. Phys. Lett. 52, 648 (1988).
3 Tung, R.T. and Batstone, J.L., Appl. Phys. Lett. 52, 1611 (1988).
4 Tung, R.T., Schrey, F., and Yalisove, S.M., Appl. Phys. Lett. 55, 2005 (1989).
5 Tung, R.T., Bean, J.C., Gibson, J.M., Poate, J.M., and Jacobson, D.C., Appl. Phys. Lett. 40, 684 (1982).
6 Hunt, B.D., Lewis, N., Hall, E.L., Turner, L.G., Schowalter, L.J., Okamoto, Masako, and Hashimoto, Shin, in Mat. Res. Soc. Symp. Proc., Vol. 56, ed. by Gibson, J.M., Osbourn, G.C., and Tromp, R.M. (Materials Research Society, Pittsburgh, Pennsylvania, 1986), pp. 151156.
7 Hunt, B.D., Lewis, N., Schowalter, L.J., Hall, E.L., and Turner, L.G., Mat. Res. Soc. Symp. Proc., Vol. 77, ed. by Dow, John D. and Schuller, Ivan K. (Materials Research Society, Pittsburgh, Pennsylvania, 1987), pp. 351356.
8 Grunthaner, P.J., Grunthaner, F.J., Fathauer, R.W., Lin, T.L., Schowengerdt, F.D., Pate, B., and Mazur, J.H., in Proc. of the Second Intl. Symp. on Silicon Molecular Beam Epitaxy, ed. by Bean, J.C. and Schowalter, L.J. (The Electrochemical Society, Pennington, New Jersey, 1988), pp. 375391.
9 For details on RBS analysis of these films, see the paper by Hashimoto, Shin et al. in this proceedings volume.
10 Fathauer, R.W., Nieh, C.W., Xiao, Q.F., and Hashimoto, Shin, Appl. Phys. Lett. 55, 247 (1989).
11 Fathauer, R.W., Nieh, C.W., Xiao, Q.F., and Hashimoto, Shin, to be published in the Proc. of the Third International Symp. on Si Molecular Beam Epitaxy (Strasbourg, France, 1989).
12 White, Alice E., Short, K.T., Dynes, R.C., Garno, J.P., and Gibson, J.M., Appl. Phys. Lett. 50, 95 (1987).
13 Bulle-Lieuwma, C.W.T., van Ommen, A.H., and van Ijzendoorn, L.J., Appl. Phys. Lett. 54, 244 (1989).
14 Fathauer, R.W. and Grunthaner, F.J., unpublished.

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed