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Colloidal quantum dot active layer electroluminescence in a solid GaN matrix

  • Jennifer Pagan (a1), Edward Stokes (a2), Kinnari Patel (a3), Casey Burkhart (a4) and Mike Ahrens (a5)...

Abstract

In this paper the preliminary results of incorporating a novel active layer into a GaN light emitting diode (LED) are discussed. Integration of colloidal CdSe quantum dots into a GaN LED active layer is demonstrated. The conductivity of the overgrowth was examined by circular transmission line method (CTLM). Effects on surface roughness due to the active layer incorporation are examined using atomic force microscopy (AFM). LED test devices were fabricated and electroluminescence was demonstrated, the devices exhibit higher turn-on voltages than would be expected for a CdSe active layer.

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1. Arakawa, Y., and Sakaki, H., “Multidimensional quantum well laser and temperature dependence of its threshold current,” Appl. Phys. Lett., vol.40, no.11, pp.939941, June 1982.
2. Asada, M., Miyamoto, Y., and Suematsu, Y., “Gain and the threshold of three-dimensional quantum box lasers,” IEEE Quantum Elect. J., vol.QE-22, no. 9, pp.19151921, Sept. 1986.
3. Alivisatos, A. P., “Semiconductor clusters, nanocrystals, and quantum dots,” Science, vol. 271, no. 5251, pp.933937, Feb. 1996.10.1126/science.271.5251.933
4. Mueller, A., Petruska, M. A., Acherman, M., Werder, D., Akhadov, E.A., Koleske, D., Hoffbauer, M., Klimov, V., “Multicolor light-emitting diodes based on semiconductor nanocrystals encapsulated in GaN charge injection layers,” Nano Letters, vol. 5, no. 6, pp. 10391044, March 2005.
5. Haus, E., Smorchkova, I.P., Heying, B., Fini, P., Poblenz, C., Mates, T., Mishra, U.K., Speck, J.S., “The role of growth conditions on the p-doping of GaN by plasma-assisted molecular beam epitaxy,” J. of Crystal Growth, vol. 246, pp. 5563, 2002.
6. Chen, N.C., Tseng, C.Y., Chiu, A.P., Shih, C.F., Chang, P.H., “Application of modified transmission line model to measure p-type GaN contact,” Appl. Physics Letters, vol. 85, no. 25, pp.60866088, Dec. 2004.10.1063/1.1835993
7. Bhattacharyya, A., Li, W., Cabalu, J., Moustakas, T.D., Smith, D. J., Hervig, R. L., “Efficient p-type doping of GaN films by plasma-assisted molecular beam epitaxy,” Appl. Physics Letters, vol. 85, no. 21, pp.49564958, Nov. 2004.
8. Ahrens, M.T., Stokes, E.B., Davydov, A., Schenck, P., Motayed, A., Harris, T.R., Morton, S.T., “Combinatorial study of nickel-gold p-contacts for blue indium gallium nitride light-emitting diodes,” ECS Transactions, vol. 1, no. 2 pp169180, 2006.
9. Batoni, P., Patel, K., Burkhart, C.C., Shah, T.K., Iyengar, V., Ahrens, M.T., Morton, S.T., Martin, B.A., Bobbio, S.M., Stokes, E.B., “Very low pressure magnetron reactive ion etching of GaN using dichlorofluoromethane (halocarbon 12),” ECS Transactions, vol.1, no.2 pp202207, 2006.
10. Schubert, E.F., Light-Emitting Diodes, (Cambridge University Press 2003) pp.5658.
11. Mueller, A., Petruska, M. A., Acherman, M., Werder, D., Akhadov, E.A., Koleske, D., Hoffbauer, M., Klimov, V., “Multicolor light-emitting diodes based on semiconductor nanocrystals encapsulated in GaN charge injection layers,” Nano Letters, vol. 5, no. 6, pp. 10391044, March 2005.
12. Lee, C.-R., Seol, K. -W., Yeon, J.-M., Choi, D. -K., Ahn, H. -K., “The effect of p-GaN:Mg layers on the turn-on voltage of p-n junction LED,” J. of Crystal Growth, vol. 222 pp.459464, 2001.

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Colloidal quantum dot active layer electroluminescence in a solid GaN matrix

  • Jennifer Pagan (a1), Edward Stokes (a2), Kinnari Patel (a3), Casey Burkhart (a4) and Mike Ahrens (a5)...

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