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Cobalt-Germanium Contacts to n-Type GaAs Electrical and Metallurgical Aspects

Published online by Cambridge University Press:  26 February 2011

M. Genut
Affiliation:
Dept. of Materials Engineering and Solid State Institute, Technion - Israel Institute of Technology, Haifa 32000, Israel
M. Eizenberg
Affiliation:
Dept. of Materials Engineering and Solid State Institute, Technion - Israel Institute of Technology, Haifa 32000, Israel
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Abstract

The correlation between the microstructure and phase formation, and the electrical properties for the Co/GaAs, Co/Ge/GaAs and Ge/Co/GaAs systems have been studied. The microstructural analysis was carried out by transmission electron microscopy, and the component redistribution was determined by Auger electron spectroscopy. The electrical properties (Schottky barrier height and contact resistivity) were studied by means of current-voltage and capacitance-voltage measurements.

Type
Research Article
Copyright
Copyright © Materials Research Society 1989

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References

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