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Cleaning of SiO2: Differences Between Thermal and Deposited Oxides

  • M. Ravkin (a1), J. J. Farber (a1), I. J. Malik (a1), J. Zhang (a1), A. J. Jensen (a1), J. M. de Larios (a1) and W. C. Krusell (a1)...

Abstract

The effects described in this paper are specific to cleaning with mechanical brush scrubbing. Oxides, both thermally grown and deposited are common cleaning applications for mechanical brush scrubbing. Thermally grown oxides present higher final defect counts after scrubbing with deionized water compared to deposited oxides. In this paper we present our results on the cleaning of unpolished and polished oxide surfaces and show differences in these results to be dependent on the chemistry used for cleaning and the degree of hydrophilicity of the wafer surface.

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1. Krusell, W.C., de Larios, J.M., The Resurgence of Mechanical Brush Scrubbing, Semicon Korea, Presentation.
2. Hetherington, D.L., Resnick, P.J., Timon, R.P., Draper, B.L., Ravkin, M., de Larios, J.M., Krusell, W.C., Madhani, A.F., (February, 1995 VUMIC).
3. Malik, I.J., Zhang, J., Jensen, A.J., Farber, J.J., Krusell, W.C., O2. 4, MRS, (1995 Spring).
4. Iler, R.K., The Chemistry of Silica, pp. 643700, (John Wiley & Sons, NY, 1979).
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Cleaning of SiO2: Differences Between Thermal and Deposited Oxides

  • M. Ravkin (a1), J. J. Farber (a1), I. J. Malik (a1), J. Zhang (a1), A. J. Jensen (a1), J. M. de Larios (a1) and W. C. Krusell (a1)...

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