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Chloride Ion Detection by InN Gated AlGaN/GaN High Electron Mobility Transistors

  • Byung Hwan Chu (a1), Hon-way Lin (a2), Shangjr Gwo (a3), Yu-Lin Wang (a4), S. J. Pearton (a5), J. W. Johnson (a6), P Rajagopal (a7), J. C. Roberts (a8), E. L. Piner (a9), K. J. Linthicum (a10) and Fan Ren (a11)...

Abstract

Chloride ion concentration can be used as a biomarker for the level of pollen exposure in allergic asthma, chronic cough and airway acidification related to respiratory disease. AlGaN/GaN high electron mobility transistor (HEMT) with an InN thin film in the gate region was used for real time detection of chloride ion detection. The InN thin film provided surface sites for reversible anion coordination. The sensor exhibited significant changes in channel conductance upon exposure to various concentrations of NaCl solutions. The sensor was tested over the range of 100 nM to 100 μM NaCl solutions. The effect of cations on the chloride ion detection was also studied.

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Keywords

Chloride Ion Detection by InN Gated AlGaN/GaN High Electron Mobility Transistors

  • Byung Hwan Chu (a1), Hon-way Lin (a2), Shangjr Gwo (a3), Yu-Lin Wang (a4), S. J. Pearton (a5), J. W. Johnson (a6), P Rajagopal (a7), J. C. Roberts (a8), E. L. Piner (a9), K. J. Linthicum (a10) and Fan Ren (a11)...

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