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Chloride Ion Detection by InN Gated AlGaN/GaN High Electron Mobility Transistors

Published online by Cambridge University Press:  31 January 2011

Byung Hwan Chu
Affiliation:
bchu83@gmail.com
Hon-way Lin
Affiliation:
d937313@oz.nthu.edu.tw, National Tsing-Hua University, Department of Physics, Hsinchu, Taiwan, Province of China
Shangjr Gwo
Affiliation:
shangjr.gwo@scholarone.com, National Tsing-Hua University, Department of Physics, Hsinchu, Taiwan, Province of China
Yu-Lin Wang
Affiliation:
ylw59@ufl.edu
S. J. Pearton
Affiliation:
spear@mse.ufl.edu, Univ.Florida, Materials, Gainesville, Florida, United States
J. W. Johnson
Affiliation:
jjohnson@nitronex.com, Nitronex Corporation, Durham, United States
P Rajagopal
Affiliation:
PRajagopal@nitronex.com, Nitronex Corporation, Durham, United States
J. C. Roberts
Affiliation:
jroberts@nitronex.com, Nitronex Corporation, Durham, United States
E. L. Piner
Affiliation:
epiner@nitronex.com, Nitronex Corporation, Durham, United States
K. J. Linthicum
Affiliation:
klinthicum@nitronex.com, Nitronex Corporation, Durham, United States
Fan Ren
Affiliation:
ren@che.ufl.edu, University of Florida, Chemical Engineering, Gainesville, Florida, United States
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Abstract

Chloride ion concentration can be used as a biomarker for the level of pollen exposure in allergic asthma, chronic cough and airway acidification related to respiratory disease. AlGaN/GaN high electron mobility transistor (HEMT) with an InN thin film in the gate region was used for real time detection of chloride ion detection. The InN thin film provided surface sites for reversible anion coordination. The sensor exhibited significant changes in channel conductance upon exposure to various concentrations of NaCl solutions. The sensor was tested over the range of 100 nM to 100 μM NaCl solutions. The effect of cations on the chloride ion detection was also studied.

Type
Research Article
Copyright
Copyright © Materials Research Society 2010

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