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Chemistry of Point Defect in Silicon and its Applications in Semiconductor Technology

Published online by Cambridge University Press:  26 February 2011

S. Pizzini ,
S. Binetti  and
M. Acciarri
S. Pizzini
Affiliation:
INFM- Department of Physical Chemistry and Electrochemistry, Via Golgi, 10 20133 Milano, (Italy)
S. Binetti
Affiliation:
INFM- Department of Physical Chemistry and Electrochemistry, Via Golgi, 10 20133 Milano, (Italy)
M. Acciarri
Affiliation:
INFM- Department of Physical Chemistry and Electrochemistry, Via Golgi, 10 20133 Milano, (Italy)
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Abstract

The chemistry of the interactions between point defects and impurities is discussed by considering first the general thermodynamic and kinetic aspects of these reactions, deserving major attention to the identity of of the stable chemical species eventually formed and to the boundary conditions for diffusion controlled and reaction controlled interaction processes.

The second part of the paper is instead dedicated to the analysis of the chemistry of carbon, oxygen, hydrogen and point defects in silicon, which is a system of major technological interest.

We postulate that at low enough temperatures, when homogeneous nucleation processes are slow, spinodal decomposition assists oxygen aggregation phenomena. We postulate, also, on the basis of the existing knowledge, that carbon and hydrogen favour alternative reaction paths for oxygen in the due of clustering processes and discuss the hydrogen-enhanced oxygen diffusivity in the frame of a conventional trapping model.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 378: Symposium B – Defect and Impurity-Engineered Semiconductors and Devices , 1995 , 913
Copyright
Copyright © Materials Research Society 1995

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