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Chemical Vapor Deposition of Silicon Borides

Published online by Cambridge University Press:  21 February 2011

T. Goto ,
M. Mukaida  and
T. Hirai
T. Goto
Affiliation:
Institute for Materials Research, Tohoku University, Katahira, Sendai 980, Japan
M. Mukaida
Affiliation:
Institute for Materials Research, Tohoku University, Katahira, Sendai 980, Japan
T. Hirai
Affiliation:
Institute for Materials Research, Tohoku University, Katahira, Sendai 980, Japan
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Abstract

Monolithic SiB4±x and SIB6 plates about 1 nm in thickness were prepared by CVD using SiCl4, B2H6 and H2 gases as source materials. The CVD-SiB4±x, plates have nonstoichiometric compositions between B/Si=3.1 and 5.0. The lattice parameters of the CVD-SiB4±x, plates are a=0.633 nm and c=1.262 to 1.271 nm. The density of the CVD-SiB4±x ranges from 2.39 to 2.45 g/cm3. The CVD-SiB6 plates have a constant composition of B/Si=6.0. The lattice parameters of the CVD-SiB6plates are a=1.444 nm, b=1.828 nm, c=0.9915 nm, and their density Is 2.42 g/cm3. These measured densities are both almost in agreement with theoretical values. The electrical conductivity, Seebeck coefficient, Hall mobility and thermal conductivity of the CVD-SiB4±x and CVD-SiB6 plates were examined in the temperature range from 300 to 1000K. The conduction mechanism Is discussed and their figure of merit values for thermoelectric materials are evaluated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 168 , 1989 , 167
Copyright
Copyright © Materials Research Society 1990

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