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Chemical Vapor Deposition of Copper Oxide Thin Films

Published online by Cambridge University Press:  15 February 2011

Yuneng Chang  and
Glenn L. Schrader
Yuneng Chang
Affiliation:
Center for Interfacial Materials and Crystallization, Department of Chemical Engineering, Iowa State University, Ames, IA 50011
Glenn L. Schrader
Affiliation:
Center for Interfacial Materials and Crystallization, Department of Chemical Engineering, Iowa State University, Ames, IA 50011
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Abstract

Copper oxide films were prepared by organometallic chemical vapor deposition of copper acetylacetonate in an oxygen-rich environment. The films were characterized by X-ray diffraction, Auger electron spectroscopy, X-ray photoelectron spectroscopy, and scanning electron microscopy. At 360 °C, Cu2O films were formed for an oxygen pressure of 150 torr and a copper acetylacetonate vapor pressure of 0.2 torr). The Cu2O film was polycrystalline, but the orientation was primarily [111]. Differential scanning calorimetry indicated that O2 assists decomposition of the organometallic precursor during pyrolysis.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 250: Symposium R – Chemical Vapor Deposition of Refractory Metals and Ceramics II , 1991 , 291
Copyright
Copyright © Materials Research Society 1992

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