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Chemical Stability of Advanced Metal Gate and Ultra-thin Gate Dielectric Interface During Rapid Thermal Annealing

Published online by Cambridge University Press:  10 February 2011

B. Claflin ,
M. Binger  and
G. Lucovsky
B. Claflin
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695claflin@ncsu.edu
M. Binger
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695
G. Lucovsky
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695gerry_lucovsky@ncsu.edu
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Abstract

The chemical stability of the compound metals TiNx and WNx on SiO2 and SiO2/Si3N4 (ON) dielectric stacks is studied by on-line Auger electron spectroscopy (AES) following sequential rapid thermal annealing treatments of 15 - 180 s up to 850 °C. The TiNx/SiO2 interface reacts at 850 °C and the reaction is kinetics driven. The TiNx/Si3N4 interface is more stable than TiNx/SiO2 even after a 180 s anneal at 850 °C. WNx is stable below 650 °C both on SiO2 and Si3N4, but above this temperature the film changes, possibly due to crystallization or interdiffusion. The changes in the WNx film are not controlled by kinetics. The compound metals are chemically more stable at elevated temperatures than pure Ti or W on SiO2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 525: Symposium W – Rapid Thermal & Integrated Processing VII , 1998 , 219
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

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