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Chemical Reaction at the Ni/Inp (110) and Ni/GaAs (110) Interfaces*

Published online by Cambridge University Press:  22 February 2011

T. Kendelewicz ,
W. G. Petro ,
M. D. Williams ,
S. H. Pan ,
I. Lindau  and
W. E. Spicer
T. Kendelewicz
Affiliation:
Stanford Electronics Laboratories, Stanford University, Stanford, California 94305
W. G. Petro
Affiliation:
Stanford Electronics Laboratories, Stanford University, Stanford, California 94305
M. D. Williams
Affiliation:
Stanford Electronics Laboratories, Stanford University, Stanford, California 94305
S. H. Pan
Affiliation:
Stanford Electronics Laboratories, Stanford University, Stanford, California 94305
I. Lindau
Affiliation:
Stanford Electronics Laboratories, Stanford University, Stanford, California 94305
W. E. Spicer
Affiliation:
Stanford Electronics Laboratories, Stanford University, Stanford, California 94305
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Abstract

The chemical reaction at the Ni/InP (110) and Ni/GaAs (110) interfaces produced by sequential deposition of thin Ni overlayers onto cleaved semiconductor surfaces has been investigated with valence band (VB) and core level photoemission and Auger spectroscopies using synchrotron radiation as the excitation source. By monitoring changes in the VB, P 2p, In 4d, Ga 3d, As 3d, and Ni 3p photoemission spectra and the lineshape of the P LVV Auger transition during the initial stage of Schottky barrier formation, we found that for both interfaces the first few Å of Ni react strongly with the surface resulting in the formation of a nickel phosphide or nickel arsenide. At the same time, segregation of metallic In or Ga is observed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 25: Symposium C – Thin Films and Interfaces II , 1983 , 323
Copyright
Copyright © Materials Research Society 1984

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Footnotes

*

Supported by DARPA and ONR.

References

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