Barium titanate (BaTiO3) thin layers were prepared by sol-gel processing. Details are reported for the synthesis route from methoxyethoxide precursors. Partially hydrolyzed solutions were spin-cast onto metallized silicon substrates, and a multilayering technique was used to develop sub-micron structures. Information is reported on the thermal processing conditions used and the development of structure. Crystallization started at 600°C and was fully developed by 700°C. The room temperature structure was cubic, and the grain size was 25–50 nm. Details are reported for the dielectric properties. Ferroelectricity was not observed. Dielectric constant (200–300) increased with increasing grain size, and was stable with respect to temperature, field and frequency. The properties are attractive for potential integrated capacitor applications.