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Chemical Bonding and Si-SiO2 Interface Reliability: (A) Minimization of Suboxide Transition Regions, and (B) Monolayer Incorporation of Nitrogen

  • G. Lucovsky (a1)

Abstract

This paper addresses two aspects of the chemical bonding arrangements at Si-SiO2 interfaces that impact significantly on electrical performance and reliability of devices with ultrathin gate dielectrics with oxide equivalent thicknesses, toxeq, in the regime of direct tunneling; i.e., toxeq < 3 nm. These are i) minimization of suboxide bonding arrangements that contribute to roughness in an interfacial transition region, and ii) monolayer nitrogen atom incorporation.

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Chemical Bonding and Si-SiO2 Interface Reliability: (A) Minimization of Suboxide Transition Regions, and (B) Monolayer Incorporation of Nitrogen

  • G. Lucovsky (a1)

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