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Chemical Beam Epitaxial Growth and Capacitance-Voltage Characterization of Si δ-Doped GaAs

  • T. H. Chiu (a1), E. F. Schubert (a1), J. E. Cunningham (a1), W. T. Tsang (a1) and B. Tell (a1)...

Abstract

High quality GaAs layers have been grown by chemical beam epitaxy using triethylgallium and arsine. Undoped GaAs epilayer with net acceptor concentration NA - ND = 3}10 14cm-3 has been obtained at a low growth temperature of 500°C. Si dopant diffusion at such low temperature during growth is negligible. Using monolayer doping technique epilayers with Si impurities localized in a 2-dimensional plane were prepared. Capacitance-voltage profiling showed a high sheet electron concentration of lx1013cm-2 and peak widths of 22Å and 18Å at 300K and 77K, respectively, which are the narrowest ever reported. For samples grown or annealed at higher temperatures, significant impurity diffusion was observed.

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Chemical Beam Epitaxial Growth and Capacitance-Voltage Characterization of Si δ-Doped GaAs

  • T. H. Chiu (a1), E. F. Schubert (a1), J. E. Cunningham (a1), W. T. Tsang (a1) and B. Tell (a1)...

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