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Chemical and Electrochemical Heteroepitaxial Growth of Chalcogenide Semiconductors from Solutions

Published online by Cambridge University Press:  10 February 2011

D. Lincot ,
M. J. Furlong ,
M. Froment ,
R. Cortes  and
M. C. Bernard
D. Lincot
Affiliation:
Laboratoire d'Electrochimie et de Chimie Analytique (U.A. 216 du CNRS), Ecole Nationale Supérieure de Chimie de Paris, 11 rue Pierre et Marie Curie, 75231 Paris, France, lincot@ext.jussieu.fr
M. J. Furlong
Affiliation:
Laboratoire d'Electrochimie et de Chimie Analytique (U.A. 216 du CNRS), Ecole Nationale Supérieure de Chimie de Paris, 11 rue Pierre et Marie Curie, 75231 Paris, France, lincot@ext.jussieu.fr
M. Froment
Affiliation:
Physique des Liquides et Electrochimie (UPR15 du CNRS), Université Pierre et Marie Curie, 4 place Jussieu, 75232 Paris, France.
R. Cortes
Affiliation:
Physique des Liquides et Electrochimie (UPR15 du CNRS), Université Pierre et Marie Curie, 4 place Jussieu, 75232 Paris, France.
M. C. Bernard
Affiliation:
Physique des Liquides et Electrochimie (UPR15 du CNRS), Université Pierre et Marie Curie, 4 place Jussieu, 75232 Paris, France.
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Abstract

Chalcogenide semiconductors have been deposited epitaxially from aqueous solutions either chemically or electrochemically at growth rates of up to 0.7 μmhr−1. After recalling the basic principles of these deposition processes, results are presented concerning chemically deposited CdS on InP, GaP and CuInSe2 substrates, electrodeposited CdTe on InP, and CdSAnP heterostructures. Characterisation of these structures by RHEED, TEM, HRTEM, and glazing angle X ray diffraction allows to analyse the effects of substrate orientation, polarity, lattice match plus the influence of temperature on epitaxial growth. These results are discussed in terms of self organisation and a site selective growth mechanisms due to the free enegy of formation of each compound.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 451: Symposium P – Electrochemical Synthesis and Modification , 1996 , 223
Copyright
Copyright © Materials Research Society 1997

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References

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