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Charge-Based Deep Level Transient Spectroscopy of Semiconducting and Insulating Materials

Published online by Cambridge University Press:  17 March 2011

V.I. Polyakov ,
A.I. Rukovishnokov ,
N.M. Rossukanyi  and
B. Druz
V.I. Polyakov
Affiliation:
Institute of Radio Eng. & Electronics, RAS, 11 Mohovaya str., 103907 Moscow, Russia, E-mail: pvi@aha.ru
A.I. Rukovishnokov
Affiliation:
Institute of Radio Eng. & Electronics, RAS, 11 Mohovaya str., 103907 Moscow, Russia, E-mail: pvi@aha.ru
N.M. Rossukanyi
Affiliation:
Institute of Radio Eng. & Electronics, RAS, 11 Mohovaya str., 103907 Moscow, Russia, E-mail: pvi@aha.ru
B. Druz
Affiliation:
Veeco Instruments Inc., Plainview, NY 11803, USA
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Abstract

The opportunity of the charge-based deep level transient spectroscopy (Q-DLTS) for study of the structures based on wide bandgap semiconducting and insulating materials such as diamond and Al2O3 was demonstrated. Using our isothermal Q-DLTS method with rate window (tm)scanning we obtained information about concentration, activation energy and capture cross-section of the native and extrinsic electrical active defects - trapping centers (TC) in slightly boron-doped polycrystalline diamond, diamond single-crystal and in the structures Al2O3 film on NiFe and Si substrates. In comparison with widely used capacitance-based deep level transient spectroscopy, Q-DLTS gives one possibility to investigate the structures in which a capacitance does not depend on the charge state of the surface and bulk traps.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 699: Symposium R – Electrically Based Microstructural Characterization III , 2001 , R3.4
Copyright
Copyright © Materials Research Society 2002

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References

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