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Charge transfer of n-type GaN photoelectrolysis in HCl solution for H2 gas generation at a counterelectrode

  • Katsushi Fujii (a1), Masato Ono (a2), Takashi Ito (a3) and Kazuhiro Ohkawa (a4)

Abstract

In order to clarify the charge transfer characteristics for H2 generation, photoelectrochemical properties of n-type GaN in HCl solution were investigated. The flatband potential under illumination and the onset voltages of photocurrent located approximately the same position. From the result, we concluded that the positively charged surface by hole capture is the main reason of the extra voltage requirement for H2 generation. The carrier concentration in n-type GaN also affects the photocurrent.

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Charge transfer of n-type GaN photoelectrolysis in HCl solution for H2 gas generation at a counterelectrode

  • Katsushi Fujii (a1), Masato Ono (a2), Takashi Ito (a3) and Kazuhiro Ohkawa (a4)

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