Hostname: page-component-7bb8b95d7b-qxsvm Total loading time: 0 Render date: 2024-09-26T07:58:08.434Z Has data issue: false hasContentIssue false
  • English
  • Français

Charge Redistribution and Defect Relaxation in Heavily Damaged Silicon Studied Using Time Analyzed Transient Spectroscopy

Published online by Cambridge University Press:  10 February 2011

Y.N. Mohapatra  and
P.K. Giri
Y.N. Mohapatra
Affiliation:
Department of Physics, Indian Institute of Technology Kanpur, India - 208016
P.K. Giri
Affiliation:
Department of Physics, Indian Institute of Technology Kanpur, India - 208016
Get access

Abstract

We have carried out electrical characterization of defects in heavily damaged silicon, where damage is created by MeV heavy ions at doses near but below amorphization threshold. Trapping kinetics over several orders of magnitude in time have been monitored using isothermal spectroscopy called Time Analyzed Transient Spectroscopy (TATS). Two distinct effects regarding the nature of changes in density of states in the gap have been demonstrated. Firstly, we show that charge redistribution among multiple traps occur such that only the occupancy of the deeper states increase at the cost of shallower ones for long time filling. Secondly, a novel defect relaxation mechanism is observed for samples with relatively lower damage. A trap is seen to exhibit progressive deepening in energy with increase in filling time, finally stabilizing for large filling times. From the athermal nature of associated TATS peaks, it is argued that the relaxation involves large entropic contribution to free energy. The necessity of using a time domain relaxation spectroscopy such as TATS in the study of different mechanisms of relaxation is demonstrated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 510: Symposium D – Defect & Impurity Engineered Semiconductors & Devices II , January 1998 , 349
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Benton, J.L., Libertino, S., Kringhoj, P., Eaglesham, D.J., Poate, J.M., and Coffa, S., J. Appl. Phys. 82, 120 (1997).Google Scholar
2. Roorda, S., Sinke, W. C., Poate, J. M., Jacobson, D. C., Dierker, S., Dennis, B. S., Eagleshman, D. J., Spaepen, F., and Fuoss, P., Phys. Rev. B 44, 3702 (1991).Google Scholar
3. Agarwal, S., Mohapatra, Y.N., and Singh, V.A., J.Appl. Phys. 77, 3155 (1995).Google Scholar
4. Giri, P.K. and Mohapatra, Y.N., J.Appl. Phys. 71, 1682 (1997).Google Scholar
5. Svensson, B. G., Mohadjeri, M., Hallen, A., Svensson, J.H., and Corbett, J. W., Phys. Rev. B 43, 2292, (1991).Google Scholar
6. Agarwal, S., Mohapatra, Y.N., singh, Vijay A. and Sharan, R., J.Appl. Phys. 77, 5725 (1995).Google Scholar
7. Su, Z. and Farmer, J.W., Appl. Phys. Lett. 59, 1746 (1991).Google Scholar
8. Farmer, J.W. and Su, Z., Phys. Rev. Lett. 71, 2979 (1993).Google Scholar
9. Cohen, J.D., Leen, T.M., and Rasmussen, R.J., Phys. Rev. Lett. 69, 3358 (1992).Google Scholar
10. Hamilton, B., Peaker, A.R. and Pantelides, S.T., Phys. Rev. Lett. 61, 1627 (1988).Google Scholar