- Cited by 34
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BUFALO, ALESSANDRO G.A. SCHLAEPFER, JURG FROMER, MARTIN and KAPPENBERGER, LUKAS 1993. Acute and Long-Term Ventricular Stimulation Thresholds with a New, Iridium Oxide-Coated Electrode. Pacing and Clinical Electrophysiology, Vol. 16, Issue. 6, p. 1240.
Scott, J. F. 1995. Dielectric breakdown in high-ε films for ulsi DRAMs: III. Leakage current precursors and electrodes. Integrated Ferroelectrics, Vol. 9, Issue. 1-3, p. 1.
Scott, J. F. 1996. Device physics of ferroelectric memories. Ferroelectrics, Vol. 183, Issue. 1, p. 51.
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Scott, J. F. 1996. Models for the frequency dependence of coercive field and the size dependence of remanent polarization in ferroelectric thin films. Integrated Ferroelectrics, Vol. 12, Issue. 2-4, p. 71.
Hwang, Cheol Seong Lee, Byoung Taek Cho, Hag-Ju Lee, Ki Hoon Kang, Chang Seok Hideki, Horii Lee, Sang In and Lee, Moon Yong 1997. A positive temperature coefficient of resistivity effect from a paraelectric Pt/(Ba0.5,Sr0.5)TiO3/IrO2 thin-film capacitor. Applied Physics Letters, Vol. 71, Issue. 3, p. 371.
Scott, J. F. and Ross, F. M. 1997. New results on layer-structure perovsktte ferroelectric thin-film memories. Ferroelectrics, Vol. 201, Issue. 1, p. 43.
Scott, James F. 1997. Thin Film Ferroelectric Materials and Devices. p. 115.
Hwang, Cheol Seong Lee, Byoung Taek Kang, Chang Seok Kim, Jin Won Lee, Ki Hoon Cho, Hag-Ju Horii, Hideki Kim, Wan Don Lee, Sang In Roh, Young Bum and Lee, Moon Yong 1998. A comparative study on the electrical conduction mechanisms of (Ba0.5Sr0.5)TiO3 thin films on Pt and IrO2 electrodes. Journal of Applied Physics, Vol. 83, Issue. 7, p. 3703.
Scott, J. F. 1998. Future issues in ferroelectric miniaturization. Ferroelectrics, Vol. 206, Issue. 1, p. 365.
Scott, J. F. 1998. HIGH-DIELECTRIC CONSTANT THIN FILMS FOR DYNAMIC RANDOM ACCESS MEMORIES (DRAM). Annual Review of Materials Science, Vol. 28, Issue. 1, p. 79.
Scott, James F. 2000. Ferroelectric Memories. Vol. 3, Issue. , p. 79.
Meyer, R.D. Cogan, S.F. Nguyen, T.H. and Rauh, R.D. 2001. Electrodeposited iridium oxide for neural stimulation and recording electrodes. IEEE Transactions on Neural Systems and Rehabilitation Engineering, Vol. 9, Issue. 1, p. 2.
Scribner, Dean Margalit, Eyal Eong, Kah-Guan Au Weiland, James de Juan, E. and Humayun, Mark S. 2002. Models of the Visual System. p. 147.
Margalit, Eyal Maia, Mauricio Weiland, James D Greenberg, Robert J Fujii, Gildo Y Torres, Gustavo Piyathaisere, Duke V O'Hearn, Thomas M Liu, Wentai Lazzi, Gianluca Dagnelie, Gislin Scribner, Dean A de Juan, Eugene and Humayun, Mark S 2002. Retinal Prosthesis for the Blind. Survey of Ophthalmology, Vol. 47, Issue. 4, p. 335.
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Multilayered Ir oxide films were prepared on Ti and Pt:Ir electrodes by the thermal decomposition of successive layers of alcohol solutions of IrCl3. The charge capacity of the thermally-formed Ir oxide films (TIROF) and the reversibility of surface oxide-related reactions were evaluated in a physiological saline solution using potential sweep and current pulse techniques. The TIROF-coated electrodes had electrochemical properties similar to an Ir electrode coated with an anodically-formed oxide. The charge injection limits before gassing ranged from 5–10 mC/cm2 for TIROF-Ti and 1–3 mC/cm2 for TIROF-Pt:Ir with biphasic, charge-balanced current pulses of 0.2 ms duration. No Pt dissolution was detected during >100 hr stimulation with TIROF-Pt:Ir electrodes. Small amounts of Ir dissolution were detected which might result from passive leaching of residual chloride complexes of Ir. The TIROF coatings remained firmly attached to the substrate metal during long term pulsing and abrasion tests. The properties of TIROF coatings, e.g., high charge capacity for reversible charge injection and good abrasion and corrosion resistance, are of great advantage for neural prosthesis applications.
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