Hostname: page-component-7bb8b95d7b-fmk2r Total loading time: 0 Render date: 2024-09-22T10:42:15.275Z Has data issue: false hasContentIssue false
  • English
  • Français

Charge and Current Transient Measurements on N-Type Hydrogenated Amorphous Silicon in the Relaxation Regime

Published online by Cambridge University Press:  16 February 2011

Uwe W. Paschen ,
Daewon Kwon  and
J. David Cohen
Uwe W. Paschen
Affiliation:
University of Oregon, Physics Department, Eugene, or 97403
Daewon Kwon
Affiliation:
University of Oregon, Physics Department, Eugene, or 97403
J. David Cohen
Affiliation:
University of Oregon, Physics Department, Eugene, or 97403
Get access

Abstract

Junction capacitance measurements were employed to study the thermal emission of electrons after application of a voltage filling pulse on a 80 Vppm PH3 doped a-Si:H sample on p+ c-Si substrate. We show that these data can be explained in terms of the relaxation Model. In addition, the time dependence of the charge flow into the depletion region during the filling pulse is investigated by current transient Measurements. Finally, we present charge transient data for a 9 Vppm a-Si:H sample on n+ c-Si substrate and compare the results to those obtained on samples on p-type substrates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 336: Symposium A – Amorphous Silicon Technology - 1994 , 1994 , 455
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Semiconductors and Semimetals (Vol. 21c and 21d), Pankove, J.I. (Ed.), Academic Press Inc. (1984)Google Scholar
[2] Cohen, J.D., Leen, T.L., and Rasmussen, R.J., Phys. Rev. Lett. 69, 3358 (1992)Google Scholar
[3] Cohen, J.D., Leen, T.L., Zhong, F., and Rasmussen, R.R., Mat. Res. Soc. Symp. Proc. 297, 183 (1993)CrossRefGoogle Scholar
[4] Branz, H.M. and Schiff, E.A., Phys. Rev. B 48, 8667 (1993)Google Scholar
[5] Palmer, R.G., Stein, D.L., Abrahams, E., and Anderson, P.W., Phys. Rev. Lett. 53, 958 (1984)Google Scholar
[6] Lang, D.V., Cohen, J.D., and Harbison, J.P., Phys. Rev. B 25, 5285 (1982)CrossRefGoogle Scholar
[7] Street, R.A., Appl. Phys. Lett. 41, 1060 (1982)Google Scholar