With 150KeV Mg+ ion implantation, the optical and structural characteristics of GaN films were studied. Post-implant annealing up to 1000°C was performed in N2 ambient with a rapid thermal annealing (RTA) system, without an encapsulation layer. We observed a green band photoluminescence from Mg-implanted GaN. This green band photoluminescence should be associated with Mg induced defect-clustering in GaN. We also use the x-ray diffraction method to study the correlation between structure defects and implantation. We observed an extra shoulder peak at the small angle side of the GaN diffraction peak. The origin of this shoulder may be attributed to implanted magnesium induced GaN lattice strain.
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