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Characterizations of Mg Implanted GaN

  • Gou-Chung Chi (a1), B. J. Pong (a1), C. J. Pan (a1), Y. C. Teng (a1) and C. H. Lee (a2)...


With 150KeV Mg+ ion implantation, the optical and structural characteristics of GaN films were studied. Post-implant annealing up to 1000°C was performed in N2 ambient with a rapid thermal annealing (RTA) system, without an encapsulation layer. We observed a green band photoluminescence from Mg-implanted GaN. This green band photoluminescence should be associated with Mg induced defect-clustering in GaN. We also use the x-ray diffraction method to study the correlation between structure defects and implantation. We observed an extra shoulder peak at the small angle side of the GaN[0004] diffraction peak. The origin of this shoulder may be attributed to implanted magnesium induced GaN lattice strain.



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  • EISSN: 1946-4274
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