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Characterization of TiN Diffusion Barrier for Submicron Technology

  • G. A. Dixit (a1), F. S. Chen (a1), H. Zhang (a1), G. D. Yao (a1), C. C. Wei (a1) and F. T. Liou (a1)...


The electrical properties and structure of reactively sputtered titanium nitride barrier metal films have been characterized. Junction leakages and yields for different post deposition treatments of the barrier metal layer are reported. TEM, x-ray diffraction and Auger electron spectroscopy have been used for the physical characterization of the TiN films.



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5. Ahn, K. Y., Wittmer, M. and Ting, C. Y., “Investigation of TiN Films Reactively Sputtered Using a Sputter Gun,” Thin Solid Films, 107, 1983, pp. 45.
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