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Characterization of TiN Diffusion Barrier for Submicron Technology

  • G. A. Dixit (a1), F. S. Chen (a1), H. Zhang (a1), G. D. Yao (a1), C. C. Wei (a1) and F. T. Liou (a1)...

Abstract

The electrical properties and structure of reactively sputtered titanium nitride barrier metal films have been characterized. Junction leakages and yields for different post deposition treatments of the barrier metal layer are reported. TEM, x-ray diffraction and Auger electron spectroscopy have been used for the physical characterization of the TiN films.

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1. Chen, F. S., Lin, Y. S., Dixit, G. A., Sundaresan, R., Wei, C. C. and Liou, F. T., “Pla-narized Aluminum Metallization For Sub- 0.5μm CMOS Technology,” Proc. IEDM, 1990, pp. 51.
2. Lai, W. Y. C., Cheung, K. P., Favreau, D. P., Case, C., Liu, R. and Murray, R. G., “CVD Aluminum for Submicron VLSI Metallization,” Proc. VMIC, 1991, pp. 89.
3. Mukai, R., Iizuka, M., Kudo, H. and Nakano, M., “Metal Plugs Produced by Excimer Laser Melting for Submicron Interconnection: Mechanisms, Electrical Properties,” Proc. VMIC, 1991, pp. 192.
4. Raaijmakers, I. J. and Sherman, A., “Contact Hole Fill with Low Temperature LPCVD TiN,” Proc. VMIC, 1990, pp. 219.
5. Ahn, K. Y., Wittmer, M. and Ting, C. Y., “Investigation of TiN Films Reactively Sputtered Using a Sputter Gun,” Thin Solid Films, 107, 1983, pp. 45.
6. Gonzales, S., Magnella, C., Boeck, B., Cox, K., Huebinger, L., Mosley, R., Nul-man, J. and Gilboa, H., “Performance of a Sequentially Deposited Ti/TiN/AlCuSi Metllization Structure,” Proc. VMIC, 1991, pp. 316.

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