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Characterization of Thin GaN Layers Deposited by Hydride Vapour Phase Epitaxy (HVPE) on 6H- SiC Substrates

Published online by Cambridge University Press:  15 March 2011

J.T. Wolan ,
Y. Koshka ,
S.E. Saddow ,
Yu. V. Melnik  and
V. Dmitriev
J.T. Wolan
Affiliation:
Dave C. Swalm School of Chemical Engineering, Mississippi State, MS 39762-9595
Y. Koshka
Affiliation:
Dave C. Swalm School of Chemical Engineering, Mississippi State, MS 39762-9595
S.E. Saddow
Affiliation:
Emerging Materials Research Laboratory, Department of Electrical & Computer Engineering, Mississippi State, MS 39762-9571
Yu. V. Melnik
Affiliation:
TDI, Inc., Gaithersburg, MD, 20877
V. Dmitriev
Affiliation:
TDI, Inc., Gaithersburg, MD, 20877
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Abstract

In this study, the near-surface regions of air-exposed thin GaN layers deposited by hydride vapour phase (HVPE) epitaxy on 6H-SiC substrates have been examined. Chemical-state identification and in-depth elemental distribution profiles are evaluated using angle-resolved X-ray photoelectron spectroscopy (ARXPS) and secondary ion mass spectroscopy (SIMS). The epilayers show a high degree of chemical purity as determined by XPS and SIMS. Low temperature photoluminescence (PL) were performed and is dominated by donor-acceptor pairs (DAP) emission. Layer thickness was measured to be ∼ 600-700 nm and an abrupt, well-defined heterointerface is observed using scanning electron microscopy (SEM) and SIMS.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 622: Symposium T – Wide-Bandgap Electronic Devices , 2000 , T5.7.1
Copyright
Copyright © Materials Research Society 2000

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References

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