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Characterization of the SnO2/a-SiC:H Interface in Amorphous Silicon Solar Cell by C-f-T Measurements

  • D. Caputo (a1), G. De Cesare (a1), F. Irrera (a1), F. Palma (a1), S. Salvatori (a1) and R. Vincenzoni (a1)...

Abstract

In this paper we present a new method for the characterization of the interface between the transparent conductive oxide (TCO) and the p doped amorphous silicon carbide layer in solar cells. The method is based on electrical capacitance measurements versus frequency in the temperature range: 20K-200K. We use Schottky diode structures (TCO-p-i-Ag) containing the p-i structure actually present in solar cells. Analysis of capacitance at different frequencies allows one to calculate an“activation energy”. Activation energy, temperature, position and shape of the capacitance step can be related to the density of states in the p type material by a model here presented. The effects of the p layer thickness and of the carbon content are investigated. A large increase of activation energy at short thickness is found, which can be related to interface damage, increasing in material with high carbon content. The technique shows an high spatial resolution and has the advantage to investigate the material as grown in the actual device.

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Characterization of the SnO2/a-SiC:H Interface in Amorphous Silicon Solar Cell by C-f-T Measurements

  • D. Caputo (a1), G. De Cesare (a1), F. Irrera (a1), F. Palma (a1), S. Salvatori (a1) and R. Vincenzoni (a1)...

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