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Characterization of the carrier confinement for InGaN/GaN light emitting diode with multiquantum barriers

  • Jen-Cheng Wang (a1), Chung-Han Lin (a1), Ray-Ming Lin (a1), Tzer-En Nee (a1), Bor-Ren Fang (a2) and Ruey-Yu Wang (a2)...

Abstract

Electroluminescence (EL) of InGaN/GaN multiquantum wells (MQW) in blue light-emitting diodes (LED) with multiquantum barriers (MQB) has been investigated. It was found that a device with an MQB structure exhibited better performance in carrier confinement, as well as higher temperature insensitivity, compared with the conventional MQW LEDs. The total cross sections ware obtained for those devices with and without MQBs, by fitting to the measurement of the spectral intensity. Not only the cross sections, but also the carrier lifetimes depending on temperature can therefore be mainly attributed to changes in Boltzmann population. All the detailed calculations are also agreement with the observations.

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Characterization of the carrier confinement for InGaN/GaN light emitting diode with multiquantum barriers

  • Jen-Cheng Wang (a1), Chung-Han Lin (a1), Ray-Ming Lin (a1), Tzer-En Nee (a1), Bor-Ren Fang (a2) and Ruey-Yu Wang (a2)...

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