Skip to main content Accessibility help
×
Home

Characterization of Stress and Texture in Rtcvd Poly-Si Layers by X-Ray Diffraction

  • István Bársony (a1) (a2), Jos G.E. Klappe (a1) and Tom W. Ryan (a3)

Abstract

The properties of polycrystalline silicon layers deposited by RTCVD have been studied by texture, stress and electrical analyse. The intrinsic layers intended for applications in integrated IC processing are very much textured with the preferred orientation depending on deposition temperature and atmosphere. Very low residual film stress in the order of 10 dyn/cm2 was detected, and a transition from compressive to tensile stress with increasing deposition temperature around 800°C was observed. This was associated with the development of the columnar structure by the (110) orientation becoming dominant at the expense of the (100) texture. Also the effect of post-deposition anneal ambience on the grain structure has been studied. Grain size and grain-boundary trapping in after doped layers have been evaluated in P-implanted RTA activated layers.

Copyright

References

Hide All
[1] Kamins, T.I., Polvcrvstalline Silicon for Integrated Circuit Applications, (Kluwer Academic Publishers, Boston, 1988)
[2] Liao, J.C., Crowley, J.L., Kamins, T.I. in Rapid Thermal Annealing/Chemical Vapor Deposition and Integrated Processing, edited by Hodul, D., Gelpey, J.C., Gree, M.L. and Seidel, T.E. (Mat. Res. Soc. Proc. 146. Pittsburgh, PA, 1989) pp. 97102
[3] ÖztUrk, M.C., Wortman, J.J., Zhong, Y.L., Ren, X.W., Miller, R.M., Johnson, F.S., Grider, D.T. and Abercrombie, D.A., in Rapid Thermal Annealing/Chemical Vapor Deposition and Integrated Processing, edited by Hodul, D., Gelpey, J.C., Gree, M.L. and Seidel, T.E. (Mat. Res. Soc. Proc. 146. Pittsburgh, PA, 1989) pp. 109114
[4] Mitchell, S.J.N., McNeill, D.W., Raza, S.H., Armstrong, B.M. and Gamble, H.S. in Polvsilieon Thin Films and Interfaces, edited by Kamins, T.I., Raicu, B. and Thompson, C.V. (Mat. Res. Soc. Proc. 182. Pittsburgh, PA, 1990), p-p. 3541
[5] Rozeboom, F. and Parekh, N., J. Vac. Sc. Technol. B8, 1249 (1990)
[6] Moslehi, M.M. and Davis, C. in Rapid Thermal Annealing/Chemical Vapor Deposition and Integrated Processing, edited by Hodul, D., Gelpey, J.C., Gree, M.L. and Seidel, T.T. (Mat. Res. Soc. Proc. 146. Pittsburgh, PA, 1989) pp. 8396
[7] Kamins, T.I., Mandurah, M.M. and Saraswat, K.C., J. Electrochem. Soc., 125. 927 (1978)
[8] Haas, G. and Thun, R.F., Physics of Thin Films, Vol.2, (Academic Press New York, 1966), pp. 211273
[9] Ren, X., Öztürk, M.C., Wortman, J.J., Batchelor, D., Mahler, D., Blat, C. and Nicollian, E. in Polvsllicon Thin Films and Interfaces, edited by Kamins, T.I.,
Raicu, B. and Thompson, C.V. (Mat. Res. Soc. Proc. 182. Pittsburgh, PA, 1990), pp. 2934
[10] Huang, J., Krulevitch, P., Johnson, G.C., Howe, R.T. and Wenk, H.R., (Mat. Res. Soc. Proc. 182. Pittsburgh, PA, 1990), pp. 201206
[11] Bartels, W. J., J. Vac. Sci. Technol. Bl, 338 (1983)

Characterization of Stress and Texture in Rtcvd Poly-Si Layers by X-Ray Diffraction

  • István Bársony (a1) (a2), Jos G.E. Klappe (a1) and Tom W. Ryan (a3)

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed