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Characterization of Single-Crystal 3C-SIC Epitaxial Layers on SI Substrates

Published online by Cambridge University Press:  10 February 2011

S. E. Saddow ,
M. E. Okhusyen ,
M. S. Mazzola ,
M. Dudley ,
X. R. Huang ,
W. Huang ,
H. Su ,
M. Shamsuzzoha  and
Y. H. Lo
S. E. Saddow
Affiliation:
Emerging Materials Research Laboratory, Dept of ECE, Mississippi State University, Miss. State, MS 39762
M. E. Okhusyen
Affiliation:
Emerging Materials Research Laboratory, Dept of ECE, Mississippi State University, Miss. State, MS 39762
M. S. Mazzola
Affiliation:
Emerging Materials Research Laboratory, Dept of ECE, Mississippi State University, Miss. State, MS 39762
M. Dudley
Affiliation:
Department of Materials Science, SUNY-Stony Brook, Stony Brook, NY
X. R. Huang
Affiliation:
Department of Materials Science, SUNY-Stony Brook, Stony Brook, NY
W. Huang
Affiliation:
Department of Materials Science, SUNY-Stony Brook, Stony Brook, NY
H. Su
Affiliation:
Department of Materials Science, SUNY-Stony Brook, Stony Brook, NY
M. Shamsuzzoha
Affiliation:
School of Mines & Energy Development, Dept. of Metallurgical & Materials Engineering, University of Alabama, Tuscaloosa, AL
Y. H. Lo
Affiliation:
School of Electrical Engineering, Cornell University, Ithaca, NY 14853
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Abstract

In this paper we discuss the growth and characterization of 3C-SiC epitaxial layers grown on both a Si substrate as well as on a novel substrate. The growth uses a typical three step process. First an etch of the Si surface is performed, second the surface of the Si is carbonized and third 3C-SiC is grown on the carbonized surface. Several characterization techniques were used to verify the quality of the 3C-SiC film. Microscopy was used to investigate the surface morphology, X-ray and electron diffraction were used to determine crystal structure, cross section TEM was used to verify crystal structure and highlight twinning, and x-ray topography was used to measure the strain fields induced in Si substrate at the 3C-SiC/Si interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 535: Symposium D/I – III-V and IV-IV Materials & Processing Challenges for Highly… , 1998 , 107
Copyright
Copyright © Materials Research Society 1999

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