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Characterization of Semi-insulating SiC

  • Nguyen Tien Son (a1), Patrick Carlsson (a2), Björn Magnusson (a3) and Erik Janzén (a4)

Abstract

Electron paramagnetic resonance was used to study defects in high-purity semi-insulating (HPSI) substrates grown by high-temperature chemical vapor deposition and physical vapor transport. Deep level defects associated to different thermal activation energies of the resistivity ranging from ~0.6 eV to ~1.6 eV in HPSI substrates are identified and their roles in carrier compensation processes are discussed. Based on the results obtained in HPSI materials, we discuss the carrier compensation processes in vanadium-doped SI SiC substrates and different activation energies in the material.

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Characterization of Semi-insulating SiC

  • Nguyen Tien Son (a1), Patrick Carlsson (a2), Björn Magnusson (a3) and Erik Janzén (a4)

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