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Characterization of RF magnetron sputtered Se-doped Ge2Sb2.3Te5 thin films

  • Tomas Wagner (a1), Jan Gutwirth (a2), Jiri Orava (a3), Jan Prikryl (a4), Petr Bezdicka (a5), Miroslav Bartos (a6), Milan Vlcek (a7) and Miloslav Frumar (a8)...

Abstract

RF magnetron sputtering technique has been used to deposit new films potentially applicable in phase-change memories. Ge2Sb2Te5 seems to be promising material, but it is not clear whether it is optimum composition for such application. We studied different deposition condition and deposition of films doped by excess of Sb and doped also by Se, which equally replaces Te atoms compare to Ge2Sb2Te5. The sputtering target composition for our study was Ge2Sb2.3Te4Se1. Sputtered films contained less Se than target. Deposited films were characterized as-deposited and after thermal treatment in temperature range 30 − 300 °C.

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Keywords

Characterization of RF magnetron sputtered Se-doped Ge2Sb2.3Te5 thin films

  • Tomas Wagner (a1), Jan Gutwirth (a2), Jiri Orava (a3), Jan Prikryl (a4), Petr Bezdicka (a5), Miroslav Bartos (a6), Milan Vlcek (a7) and Miloslav Frumar (a8)...

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