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Characterization of Plasma-Deposited Amorphous Carbon Films*

Published online by Cambridge University Press:  25 February 2011

Wen. L. Hsu ,
G. W. Foltz ,
F. A. Greulich ,
K. F. Mccarty ,
G. J. Thomas ,
P. F. Green  and
B. L. Doyle
Wen. L. Hsu
Affiliation:
Sandia National Laboratories, Livermore, CA 94550
G. W. Foltz
Affiliation:
Sandia National Laboratories, Livermore, CA 94550
F. A. Greulich
Affiliation:
Sandia National Laboratories, Livermore, CA 94550
K. F. Mccarty
Affiliation:
Sandia National Laboratories, Livermore, CA 94550
G. J. Thomas
Affiliation:
Sandia National Laboratories, Livermore, CA 94550
P. F. Green
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
B. L. Doyle
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
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Abstract

Thin carbon films of ˜ 600 Å have been deposited on Si <111> wafers by striking an RF discharge in gas mixtures of hydrogen and methane. The deposition rate increased with increasing methane fraction. The peak rate was ˜ 1 Å/sec at an applied power density of 0.4 W cm−2. The films, with an average density of 2.54 gm cm−3, are amorphous in nature but exhibit broad diffraction maxima corresponding to interatcidc spacings of 2.05Å and 1. 15Å. Measurements of hydrogen concentration in the films showed that the hydrogen at. % [H/(H+C)] increased from 30 to 40% as the hydrogen fraction in the feed gas increased. By using a D2-CH4, we were also able to deduce that hydrogen molecules can be a large source of hydrogen trapped in the films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 98: Symposium K – Plasma Processing and Synthesis of Materials II , 1987 , 155
Copyright
Copyright © Materials Research Society 1987

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Footnotes

*

This work was supported by the U.S. Department of Energy.

References

REFERENCES

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