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Characterization of Optical Lifetime in Silicon-on-Insulator Wafers by Photoluminescence Decay Method

Published online by Cambridge University Press:  21 March 2011

Shigeo Ibuka ,
Michio Tajima  and
Atsushi Ogura
Shigeo Ibuka
Affiliation:
Institute of Space and Astronautical Science, Sagamihara, 229-8510, Japan
Michio Tajima
Affiliation:
Institute of Space and Astronautical Science, Sagamihara, 229-8510, Japan
Atsushi Ogura
Affiliation:
System Devices and Fundamental Research, NEC Corporation, Tsukuba, 305-8501, Japan
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Abstract

We report observation of temporal decay of luminescence due to electron-hole condensation in silicon-on-insulator (SOI) wafers. The condensate luminescence was observable in SOI wafers under ultraviolet light excitation, because of shallow penetration depth of the light and confinement of photo-excited carriers in the top-Si layer. We found that the temporal decay of the luminescence depended on the surface/interface condition and fabrication method. These findings can be explained by the difference in the recombination process via surface, interface and defect states in the top-Si layer. We propose that the decay measurement of the condensate luminescence has great potential for characterization of SOI wafers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 681: Symposium I – Wafer Bonding and Thinning Techniques for Materials Integration , 2001 , I9.6
Copyright
Copyright © Materials Research Society 2001

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References

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