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Characterization of OMVPE-Grown AlGaInN Heterostructures

Published online by Cambridge University Press:  10 February 2011

D. P. Bour
Affiliation:
XEROX Palo Alto Research Center, Electronic Materials Laboratory, 3333 Coyote Hill Road, Palo Alto, CA 94304, bour@parc.xerox.com
H. F. Chung
Affiliation:
XEROX Palo Alto Research Center, Electronic Materials Laboratory, 3333 Coyote Hill Road, Palo Alto, CA 94304, bour@parc.xerox.com
W. Götz
Affiliation:
Hewlett-Packard Optoelectronics Divison, 370 West Trimble Road, San Jose, CA 95131
L. Romano
Affiliation:
XEROX Palo Alto Research Center, Electronic Materials Laboratory, 3333 Coyote Hill Road, Palo Alto, CA 94304, bour@parc.xerox.com
B. S. Krusor
Affiliation:
XEROX Palo Alto Research Center, Electronic Materials Laboratory, 3333 Coyote Hill Road, Palo Alto, CA 94304, bour@parc.xerox.com
D. Hofstetter
Affiliation:
XEROX Palo Alto Research Center, Electronic Materials Laboratory, 3333 Coyote Hill Road, Palo Alto, CA 94304, bour@parc.xerox.com
S. Rudaz
Affiliation:
Hewlett-Packard Optoelectronics Divison, 370 West Trimble Road, San Jose, CA 95131
C. P. Kuo
Affiliation:
Hewlett-Packard Optoelectronics Divison, 370 West Trimble Road, San Jose, CA 95131
F. A. Ponce
Affiliation:
XEROX Palo Alto Research Center, Electronic Materials Laboratory, 3333 Coyote Hill Road, Palo Alto, CA 94304, bour@parc.xerox.com
N. M. Johnson
Affiliation:
XEROX Palo Alto Research Center, Electronic Materials Laboratory, 3333 Coyote Hill Road, Palo Alto, CA 94304, bour@parc.xerox.com
M. G. Craford
Affiliation:
Hewlett-Packard Optoelectronics Divison, 370 West Trimble Road, San Jose, CA 95131
R. D. Bringans
Affiliation:
XEROX Palo Alto Research Center, Electronic Materials Laboratory, 3333 Coyote Hill Road, Palo Alto, CA 94304, bour@parc.xerox.com
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Abstract

We report on the OMVPE growth and characterization of AlGalnN and its heterostructures, including measurements of electrical properties (Hall), optical properties (photo- and cathodo- luminescence), structural characteristics (x-ray diffraction and TEM); and also the emission of InGaN/AlGaN heterostructures subject to optical and electrical pumping.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

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References

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