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Characterization of n-type layer by S+ ion implantation in 4H-SiC

Published online by Cambridge University Press:  15 March 2011

Yasunori Tanaka ,
Naoto Kobayashi ,
Hajime Okumura ,
Sadafumi Yoshida ,
Masataka Hasegawa ,
Masahiko Ogura  and
Hisao Tanoue
Yasunori Tanaka
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba 305-8568, Ibaraki, Japan
Naoto Kobayashi
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba 305-8568, Ibaraki, Japan
Hajime Okumura
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba 305-8568, Ibaraki, Japan
Sadafumi Yoshida
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba 305-8568, Ibaraki, Japan
Masataka Hasegawa
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba 305-8568, Ibaraki, Japan
Masahiko Ogura
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba 305-8568, Ibaraki, Japan
Hisao Tanoue
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba 305-8568, Ibaraki, Japan
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Abstract

We investigated the optical, electrical and structural properties of the layer which was implanted with sulfur ion(S+) in 4H-SiC. By using the high temperature ion implantation technique more less residual defects were observed compared with the room temperature ion implantation by Rutherford backscattering spectrometry and channeling(RBS-channeling). After annealing at 1700°C there was no significant difference between the implanted sample and virgin sample in crystallinity within the detection limit of RBS-channeling. From the result of low temperature photoluminescence(LTPL) we could see the photoluminescences, so-called D1 and D2center, originating in the defects formed by ion implantation and post-annealing(∼1700°C) processes and confirmed that their intensities decreased with the increasing of the total dose of S+. The result of Hall effect measurement suggested that the conduction type of S+-implanted layer is n-type and their activation energies were 275meV and 410meV by the fitting of neutrality equation assuming the two activation energies for the hexagonal and cubic lattice sites in 4H-SiC.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 622: Symposium T – Wide-Bandgap Electronic Devices , 2000 , T8.6.1
Copyright
Copyright © Materials Research Society 2000

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References

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