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Characterization of n-type layer by S+ ion implantation in 4H-SiC

  • Yasunori Tanaka (a1), Naoto Kobayashi (a1), Hajime Okumura (a1), Sadafumi Yoshida (a1), Masataka Hasegawa (a1), Masahiko Ogura (a1) and Hisao Tanoue (a1)...

Abstract

We investigated the optical, electrical and structural properties of the layer which was implanted with sulfur ion(S+) in 4H-SiC. By using the high temperature ion implantation technique more less residual defects were observed compared with the room temperature ion implantation by Rutherford backscattering spectrometry and channeling(RBS-channeling). After annealing at 1700°C there was no significant difference between the implanted sample and virgin sample in crystallinity within the detection limit of RBS-channeling. From the result of low temperature photoluminescence(LTPL) we could see the photoluminescences, so-called D1 and D2center, originating in the defects formed by ion implantation and post-annealing(∼1700°C) processes and confirmed that their intensities decreased with the increasing of the total dose of S+. The result of Hall effect measurement suggested that the conduction type of S+-implanted layer is n-type and their activation energies were 275meV and 410meV by the fitting of neutrality equation assuming the two activation energies for the hexagonal and cubic lattice sites in 4H-SiC.

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Characterization of n-type layer by S+ ion implantation in 4H-SiC

  • Yasunori Tanaka (a1), Naoto Kobayashi (a1), Hajime Okumura (a1), Sadafumi Yoshida (a1), Masataka Hasegawa (a1), Masahiko Ogura (a1) and Hisao Tanoue (a1)...

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