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Characterization of MS, MiS, and Mos Contacts to Type IIB Diamond by Capacitance-Voltage and Current-Volt Age
Published online by Cambridge University Press: 21 February 2011
Abstract
Three types of electrical contacts on natural type lib single crystal diamonds have been studied by current-voltage (IV) and capacitance-voltage (CV) measurements. Vertical structures were fabricated with the metal-diamond (MS), metal-undoped diamond-doped diamond (MiS), or metal-SiO2-doped diamond (MOS) contacts and ohmic contacts on the opposite face of the diamond. The MS contact was rectifying and both the MiS and MOS were blocking contacts. While very high leakage currents were measured on the MiS structure in forward bias (MO6times the reverse bias), an accumulation region was observed in the MiS CV data. The uncompensated acceptor concentration values calculated from the CV data were in good agreement for different structures fabricated on the same samples and with the secondary ion mass spectroscopy (SIMS) measurements of the bulk boron concentration. Extreme stretch out was observed in the CV of the MiS and MOS due to interface traps. The density of interface traps was estimated to be in the 1012 cm-2 eV-1 range for these structures.
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- Copyright © Materials Research Society 1994
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