Hostname: page-component-76fb5796d-vvkck Total loading time: 0 Render date: 2024-04-25T16:23:21.499Z Has data issue: false hasContentIssue false
  • English
  • Français

Characterization of MFMIS and MFIS Structures for Non-volatile Memory Applications

Published online by Cambridge University Press:  01 February 2011

Mosiur Rahman ,
T. S. Kalkur ,
Shunming Sun ,
Fred P. Gnadinger ,
David Dalton ,
Daesig Kim ,
Viorel Olariu  and
David Klingensmith
Mosiur Rahman
Affiliation:
University of Colorado at Colorado Springs, Colorado Springs, 80933–7150, USA
T. S. Kalkur
Affiliation:
University of Colorado at Colorado Springs, Colorado Springs, 80933–7150, USA
Shunming Sun
Affiliation:
University of Colorado at Colorado Springs, Colorado Springs, 80933–7150, USA
Fred P. Gnadinger
Affiliation:
COVA Technologies Inc., Colorado Springs, CO 80906, USA
David Dalton
Affiliation:
COVA Technologies Inc., Colorado Springs, CO 80906, USA
Daesig Kim
Affiliation:
COVA Technologies Inc., Colorado Springs, CO 80906, USA
Viorel Olariu
Affiliation:
COVA Technologies Inc., Colorado Springs, CO 80906, USA
David Klingensmith
Affiliation:
COVA Technologies Inc., Colorado Springs, CO 80906, USA
Get access

Abstract

To eliminate the interface reaction problems between ferroelectric and semiconductor in MFS (metal-ferroelectric-semiconductor) as well as ferroelectric and insulator in MFIS (metal-ferroelectric-insulator-semiconductor) structures, a gate layer sandwich of the MFMIS (metal-ferroelectric-metal-insulator-semiconductor) is proposed. This structure consists of Pt-SBT-Pt-ZrO2-SiO2-Si stacks. In the MFMIS structure the MIS capacitor is separated from the ferroelectric MFM capacitor through a metal as a floating gate. Therefore, the MIS capacitor with SiO2 and ZrO2 as an insulator with excellent interface properties can be used and MFM acts as an ideal ferroelectric capacitor. As MFMIS is a series combination of MFM and MIS capacitors, it behaves as a voltage divider. The gate voltage is divided according to the capacitance ratio of the MIS and MFM structures. Since the fabricated devices have access to the floating gate, characteristics of the MFM and MIS capacitors can be determined independently to compare the characteristics of the MFMIS structure as a single capacitor. The ferroelectric can be programmed in one direction and the field effect due to that can be analyzed. The MFMIS structures showed significant memory window due to the polarization of ferroelectric thin films but the retention time was short. The short retention time was due to the depolarization field being larger than coercive field of the ferroelectric thin film.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 830: Symposium D – Materials and Processes for Nonvolatile Memories , 2004 , D3.2
Copyright
Copyright © Materials Research Society 2005

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Lee, H.N., Lim, M., Kim, Y.T., Kalkur, T.S., and Choh, S.H., Japanese Journal of Applied Physics, Vol.31, 3, 1107–1109 (1999).Google Scholar
[2] Ishiwara, H., Future Electron Devices (FED) 11, 27 (2000).Google Scholar
[3] Miller, S.L. and McWhorter, P.J., J. Appl. Phys., vol.72, no.12, 5999–6010 (1992).Google Scholar
[4] Nakao, Nakamura Y., Kamisawa, A., and Takasu, H., Integrated Ferroelctrics 9, 179 (1995).Google Scholar
[5] Kalkur, T.S., Argos, G., and Kammerdiner, L., “Characteristics of metal-PZT/p-Si MIS capacitors,” MRS Proceedings, vol. 200, 313, 1990.Google Scholar
[5] Takahshi, M. et al., Jpn. J. Appl. Phys., B, vol.40, no.4, 2923–2927, (2001).Google Scholar
[6] Ma, T. P. and Han, Jin-Ping, IEEE Electron Device Letters, Vol. 23, No. 7, July 2002.Google Scholar
[7] http://www.symetrixcorp.com/Pub003.pdf Google Scholar