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Characterization of Hydrogen in Hydrogenated Nano-Crystalline Silicon

Published online by Cambridge University Press:  15 February 2011

K. Yamamoto ,
T. Itoh ,
K. Ushikoshi ,
S. Nonomura  and
S. Nitta
K. Yamamoto
Affiliation:
Department of Electrical Engineering, Gifu University, 1-1 Yanaido, Gifu 501-1 193, Japan
T. Itoh
Affiliation:
Department of Electrical Engineering, Gifu University, 1-1 Yanaido, Gifu 501-1 193, Japan
K. Ushikoshi
Affiliation:
Department of Electrical Engineering, Gifu University, 1-1 Yanaido, Gifu 501-1 193, Japan
S. Nonomura
Affiliation:
Environment and Renewable Energy Systems, Graduate School of Engineering, Gifu University, 1-I Yanaido, Gifu 501-1193, Japan
S. Nitta
Affiliation:
Department of Electrical Engineering, Gifu University, 1-1 Yanaido, Gifu 501-1 193, Japan
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Abstract

The characterization of hydrogen in hydrogenated nano-crystalline silicon (nc-Si:H) films with various crystallinity has been studied using FTIR absorption spectroscopy and gas effusion spectroscopy. In gas effusion spectrum of a nc-Si:H, three evolution peaks of H2 are found near 400, 500 and 600°C. From the deconvolution of the gas effusion spectra, the hydrogen concentration in amorphous region dose not depend on the volume fraction of crystalline. The surface density of hydrogen at the interface and in the grain boundaries of nano-crystalline grains decreases with the volume fraction of crystalline. The properties of hydrogen in nc-Si:H films are discussed with the results of FTIR absorption spectroscopy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 557: Symposium A – Amorphous and Heterogeneous Silicon Thin Films—Fundamentals to Devices—1999 , 1999 , 317
Copyright
Copyright © Materials Research Society 1999

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References

1. Itoh, T., Nitta, S., Wang, S.L., and Taylor, P.C., J. Appl. Phys. 80, p.6028–6031 (1996).Google Scholar
2. Beyer, W., Hapke, P., and Zastrow, U. in Amorphous silicon Technology-1997, edited by Wagner, S., Hack, M., Schiff, E.A., Schropp, R., and Shimizu, I. (Mater. Res. Soc. Proc. 467, Pittsburgh, PA 1997), p.343–348.Google Scholar
3. Sinniah, K., Sherman, M.G., Lewis, L.B., Weinberg, W.H., Yates, J.T. Jr, and Janda, K.C., Phys. Rev. Letters 62, p.567–570 (1989).Google Scholar
4. Beyer, W., Physica B 170, p.105–114 (1991).Google Scholar
5. Nitta, S., Kawai, M., Sakaida, M., Murase, I., and Hatano, A. in Tetrahedrally-Bonded Amorphous Semiconductors, edited by Adler, D. and Fritzsche, H. (Plenum Press, New York, NY 1985), p.501–511.Google Scholar