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Characterization of GaN MOS Structures Using Photoanodically Grown Oxides with Respect to FET Devices

Published online by Cambridge University Press:  17 March 2011

D. Mistele ,
T. Rotter ,
R. Ferretti ,
F. Fedler ,
H. Klausing ,
O.K. Semchinova ,
J. Stemmer ,
J. Aderhold  and
J. Graul
D. Mistele
Affiliation:
Laboratory for Information Technology, University of Hannover, Schneiderberg 32, D-30167 Hannover, GermanyE-mail:david.mistele@lfi.uni-hannover.de
T. Rotter
Affiliation:
Laboratory for Information Technology, University of Hannover, Schneiderberg 32, D-30167 Hannover, Germany
R. Ferretti
Affiliation:
Institute for Semiconductor Technology, University of Hannover, Appelstr.4A, D-30167 Hannover, Germany
F. Fedler
Affiliation:
Laboratory for Information Technology, University of Hannover, Schneiderberg 32, D-30167 Hannover, Germany
H. Klausing
Affiliation:
Laboratory for Information Technology, University of Hannover, Schneiderberg 32, D-30167 Hannover, Germany
O.K. Semchinova
Affiliation:
Laboratory for Information Technology, University of Hannover, Schneiderberg 32, D-30167 Hannover, Germany
J. Stemmer
Affiliation:
Laboratory for Information Technology, University of Hannover, Schneiderberg 32, D-30167 Hannover, Germany
J. Aderhold
Affiliation:
Laboratory for Information Technology, University of Hannover, Schneiderberg 32, D-30167 Hannover, Germany
J. Graul
Affiliation:
Laboratory for Information Technology, University of Hannover, Schneiderberg 32, D-30167 Hannover, Germany
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Abstract

Photoanodically grown Ga2O3 layers were characterized with respect to their suitability as gate dielectrics for GaN based MOSFET Device applications. The Ga2O3 layers were produced in a photoelectrochemical cell using aqueous solutions of KOH. IV characterization of MOS structures show insulating behavior of the oxide layers and CV measurements indicate a small density of states at the oxide/GaN interface. Integrating the wet chemical oxide growth in a MOSFET device fabricating process includes tungsten as gate metal together with H2O2 as etching solution for the gate metal. Source/drain areas were made free of oxide by the alkaline developer of a conventional lithographic step and metallization was done by using the liftoff technique. MOS structures show no inversion mode but strong depletion in reverse biasing mode.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 639: Symposium G – GaN and Related Alloys-2000 , 2000 , G11.42
Copyright
Copyright © Materials Research Society 2001

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References

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