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Characterization of GaAs/Si Interface Structure by X-Ray Diffraction

  • E. D. Specht (a1), G. E. Ice (a1), C. J. Peters (a1), C. J. Sparks (a1), N. Lucas (a2), X.-M. Zhu (a2), R. Moret (a2) and H. Morkoc (a3)...

Abstract

By measuring the intensity profiles along the crystal truncation rods of a Si(001) substrate, we obtain the depth sensitivity necessary for x-ray diffraction measurements of the structure of its interface with a thick GaAs overlayer which is epitaxial to, but not in registry with the substrate. By comparing the diffraction with a model based on a grid of misfit dislocations, we find that the atoms at the interface have a root mean square displacement of 1.09±0.1Å from this ideal structure, and that the interface has a roughness of 2.9±1 Å. The diffraction indicates an anomalously small strain perpendicular to the interface in the GaAs near the interface.

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1. van der Merwe, J. H., Proc. Phys. Soc. (London) A63, 616 (1950).
2. Choi, H. K., Tuner, G. W., and Tsaur, B-Y., IEEE Electron Device Lett. EDL–7, 271 (1986).
3. Shichijo, H. and Lee, J. W. in Materials Research Society Symposia Proceedings, Vol.67, Heteroepitaxy on Silicon, edited by Fan, J.C.C. and Poate, J. M.(Materials Research Society, Pittsburgh, PA, 1986), pp. 173–180.
4. Akiyama, M., Kawarada, Y., and Kaminish, K., J. Appl. Phys. 23, L843 (1984).
5. Masselink, W. T., Henderson, T., Klem, J., Fisher, R., Pearah, P., Morkoc, H., Hafich, M., Wang, P.D., and Robinson, G. Y., Appl. Phys. Lett. 45, 1309 (1984).
6. Fisher, R., Neuman, D., Zabel, H., Morkoc, H., Choi, C., and Otsuka, N., Appl. Phys. Lett. 48, 1223 (1986).
7. Lee, J. W. in Materials Research Society Symposia Proceedings, Vol. 67, Heteroepitaxy on Silicon, edited by Fan, J.C.C. and Poate, J. M. (Materials Research Society, Pittsburgh, PA, 1986), pp. 29–36.
8. Metze, G. M., Choi, H. K., and Tsaur, B.-Y., Appl. Phys. Lett. 45,1107 (1984).
9. Fischer, R., Morkoc, H., Neumann, D. A., Zabel, H., Choi, C., Otsuka, N., Longerbone, M., and Erickson, L. P., J. Appl. Phys. 60,1640 (1986).
10. Bommannavar, A. S., Sparks, C. J., Habenschuss, A., Ice, G. E., Dhere, A., Morkoc, H., and Zabel, H., in Materials Research Society Symposium Proceedings, 102 223 (1988).
11. Tsai, H. L. and Lee, J. W., Appl. Phys. Lett. 51, 130 (1987).
12. Robinson, I. K., Tung, R. T., and Feidenhans'l, R., Phys. Rev. B 38, 3632 (1988).
13. Habenschuss, A., Ice, G. E., Sparks, C. J., and Neiser, R. A., Nucl. Instr. and Methods A 266, 215 (1988).
14. Specht, E. D., Ice, G. E., Peters, C. J., Sparks, C. J., Lucas, N., Zhu, X.-M., Moret, R., and Morkog, H, to be published.
15. International Tables for X-Ray Ctystallography, Lonsdale, K. ed. (Kynoch Press, Birmingham, Eng., 1962), Vol. III, p. 204.
16. Robinson, I. K., Phys. Rev. B 33, 3830 (1986).
17. Lucas, N., Zabel, H., Morkoc, H., and Unlu, H., Appl. Phys. Lett. 52, 2117 (1988).
18. Hertel, N., Materlik, G., and Zagenhagen, J., Z. Phys. B, 58, 199 (1985).
19. Lucas, N., Zabel, H., lyer, S. V., and Morkoc, H., to be published.

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