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Characterization of Emitter-Collector Shorts by Anodization, Voltage Contrast Sem, and Tem

Published online by Cambridge University Press:  25 February 2011

A. H. Carim ,
R. Sinclair  and
W. T. Stacy
A. H. Carim
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305
R. Sinclair
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305
W. T. Stacy
Affiliation:
Philips Research Laboratories Sunnyvale, Signetics Corporation, 811 E. Arques Avenue, Sunnyvale, CA 94086
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Abstract

Chemical anodization and voltage contrast scanning electron microscopy (VC-SEM) have been used to identify electrically faulty structures in a bipolar test array. Direct comparison of these techniques was achieved by examining the same emitters with each method. VC-SEM is shown to be a useful technique for delineating E-C shorts because of its nondestructive and purely electrical nature. Further investigations by transmission electron microscopy revealed dislocations in many short-circuited emitters and occasionally in unshorted devices. This confirmed prior observations that crystallographic defects in silicon devices may sometimes be, but are not always, electrically active.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 41: Symposium K – Advanced Photon and Particle Techniques for the Characterization of Defects in Solids , 1984 , 375
Copyright
Copyright © Materials Research Society 1985

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