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Characterization of Defects Produced in TEOS Thin Films due to Chemical-Mechanical Polishing (CMP)

Published online by Cambridge University Press:  15 February 2011

F. B. Kaufman ,
S. A. Cohen  and
M. A. Jaso
F. B. Kaufman
Affiliation:
IBM T. J. Watson Research Center and Semiconductor Research and Development Center, Yorktown Heights, N.Y. 10598
S. A. Cohen
Affiliation:
IBM T. J. Watson Research Center and Semiconductor Research and Development Center, Yorktown Heights, N.Y. 10598
M. A. Jaso
Affiliation:
IBM T. J. Watson Research Center and Semiconductor Research and Development Center, Yorktown Heights, N.Y. 10598
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Abstract

Time zero breakdown electrical measurements, SIMS, Bias Temperature Stress (BTS), and Triangular Voltage Sweep (TVS) techniques performed on MOS capacitors have been used to characterize two types of defects produced in TEOS thin films subjected to CMP process planarization. Microcracking of the insulator, resulting in degradation in breakdown characteristics, and uptake of K+ ions (from the polishing slurry) are found to occur. These defects are thought to be caused by the chemical and mechanical stress to which the oxide surface is subjected during the CMP process. The effects of polish pad type, non K+ ion containing slurry and post-CMP wet etch steps were all found to influence the extent of damage observed in polished films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 386: Symposium O – Ultraclean Semiconductor Processing Technology and Surface , 1995 , 85
Copyright
Copyright © Materials Research Society 1995

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References

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