Skip to main content Accessibility help
×
Home

Characterization of Defects in Silicon Ribbons By Combined Ebic and Hvem

  • Horst Strunk (a1), Brian Cunningham (a1) and Dieter Ast (a1)

Abstract

The electrical properties and crystallographic nature of linear and planar defects in EFG silicon ribbons were studied. A direct correlation between electrical and structural properties was obtained by imaging the same areas first with EBIC and then with HVEM. Coherent twin boundaries were found to be electrically inactive, but higher order twins and other grain boundaries generally enhanced minority carrier recombination. Partial dislocations confined to coherent twin boundaries were usually electrically active, but in certain instances partial dislocations were observed which had no apparent EBIC contrast.

Copyright

References

Hide All
1. Kalejs, J. P., Mackintosh, B. H. and Surek, T., J. Cryst. Growth, 50, 175 (1980).
2. Yang, K., Schwuttke, G. H. and Ciszek, T. F., J. Cryst. Growth, 50, 301 (1980).
3. Hanoka, J. I., Photovoltaic Material and Device Measurement Workshop, “Focus on Polycrystalline Thin Film Cells,” Arlington, Virginia (1979).
4. Kohn, J. A., Am. Mineral., 41, 778 (1956).
5. Kohn, J. A., Am. Mineral., 43, 263 (1958).
6. Hornstra, J., Physica, 25, 409 (1959).
7. Alexander, H., J. de Physique C6, 40, 1 (1979).
8. Bourret, A. and Dessaux, J., J. Physique Colloq. C6, 40, 7 (1979).
9. Hirsch, P. B., J. Microscopy, 118, 3 (1980).

Characterization of Defects in Silicon Ribbons By Combined Ebic and Hvem

  • Horst Strunk (a1), Brian Cunningham (a1) and Dieter Ast (a1)

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed