Article contents
Characterization of Defects in N-Type 6H-SiC Single Crystals by Optical Admittance Spectroscopy
Published online by Cambridge University Press: 22 February 2011
Abstract
Optical admittance spectroscopy is a technique for measuring the conductance and capacitance of a junction under illumination as a function of the wavelength of the light and the frequency of the measuring AC signal. For the first time, this technique is applied to characterize deep defect levels in 6H-SiC:N. Nitrogen is a donor atom in 6H-SiC which substitutes for carbon in three inequivalent sites (h, kl, k2). giving rise to n-type conduction. Deep defect levels attributible to transition metal impurities have been identified in 6H-SiC:N by optical admittance spectroscopy.
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 1994
References
- 3
- Cited by