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Characterization of Defect Structures in SiC Single Crystals Using Synchrotron X-Ray Topography

Published online by Cambridge University Press:  15 February 2011

S. Wang ,
M. Dudley ,
C. Carter Jr. ,
D. Asbury  and
C. Fazit
S. Wang
Affiliation:
Dept. of Materials Science and Engineering, SUNY at Stony Brook, NY 11794-2275.
M. Dudley
Affiliation:
Dept. of Materials Science and Engineering, SUNY at Stony Brook, NY 11794-2275.
C. Carter Jr.
Affiliation:
Cree Research, Inc., 2810 Meridian Parkway, Durham NC 27713.
D. Asbury
Affiliation:
Cree Research, Inc., 2810 Meridian Parkway, Durham NC 27713.
C. Fazit
Affiliation:
U.S. Army Research Laboratory, 2800 Powder Mill Rd, Adelphi, MD 20783.
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Abstract

Synchrotron white beam X-ray topography has been used to characterize defect structures in 6H-SiC wafers grown on (0001) seeds. Two major types of defects are observed: super screw dislocations approximately perpendicular to the basal plane and dislocation networks lying in the basal plane. The super screw dislocations, which have open cores, are growth dislocations. These dislocations act as sources and/or sinks for the glide dislocation networks. Detailed analysis and discussion of dislocation generation phenomena and Burgers vectors will be presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 307: Symposium L – Applications of Synchrotron Radiation Techniques to Materials Science , 1993 , 249
Copyright
Copyright © Materials Research Society 1993

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References

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