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Characterization of CdGeAs2 Using Capacitance Methods

Published online by Cambridge University Press:  10 February 2011

S. R. Smith ,
A. O. Evwaraye  and
M. C. Ohmer
S. R. Smith
Affiliation:
University of Dayton Research Institute, 300 College Park, Dayton, OH 45469-0178
A. O. Evwaraye
Affiliation:
University of Dayton, Department of Physics, 300 College Park, Dayton, OH 45469-2314
M. C. Ohmer
Affiliation:
Materials & Manufacturing Directorate, Air Force Research Laboratory, MLPO, Wright-Patterson Air Force Base, OH 45377-7707
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Abstract

Thermal Admittance Spectroscopy(TAS) has been used to detect energy levels in the bandgap of CdGeAs2 specimens. Capacitance-Voltage(CV) measurements were used to determine the net free carrier concentration of the specimens as well as the conductivity type. All specimens were found to be p-type. CV measurements determined that the free carrier densities ranged from 1.2 × 1017 cm−3 to 8 × 1018 cm−3. Usually one peak (but in some cases two) was observed in the thermal admittance spectra. One peak present in two samples indicates an acceptor with a thermal activation energy of Ev+(0.10–0.13) eV which corresponds closely to the value of 0.10–0.12 eV found from Hall effect measurements on these specimens. The additional peak observed could correspond to a second deeper acceptor at Ev+0.346 eV, however, the energy could not be accurately determined because the peak was not fully resolved. Evidence for the existence of two native acceptors from electron paramagnetic resonance has recently been reported which tends to support a two acceptor model.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 484: Symposium F – Infrared Applications of Semiconductors II , 1997 , 581
Copyright
Copyright © Materials Research Society 1998

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References

1. Dmitriev, V.G., Gwzadyan, G.G., Nikogosyan, D.N., Handbook of Nonlinear Optical Crystals, Springer-Verlag, Berlin, 1991 Google Scholar
2. Schunemann, P.G. and Pollack, T.M., J. Cryst. Growth 174, p.272 (1997)Google Scholar
3. Madelon, R., Paumier, E., and Hairie, A., Phys. Stat. Sol. (b) 165, p.435 (1991)Google Scholar
4. Achimchenko, L.P., Ivanov, V.S., and Boschchevskii, A. S., Soy. Phys. Semicond. 7, p.309 (1973)Google Scholar
5. McCrae, J.E., Hengehold, R.L., and Yeo, Y.K., Appl. Phys. Lett. 70, p.455 (1997)Google Scholar
6. Fischer, D.W., Ohmer, M.C., and McCrae, J.E., J. Appl. Phys. 81, p.3579 (1997)Google Scholar
7. Halliburton, L.E., Edwards, G.J., Schunemann, P.G., and Pollack, T.M., J. Appl. Phys. 77, p.445 (1995)Google Scholar
8. Evwaraye, A.O., Smith, S.R., and Mitchel, W.C., J. Appl. Phys. 75, p.3472 (1994)Google Scholar
9. Shay, J.L. and Wernick, J.H. Ternary Chalcopyrite Semiconductors: Growth, Electronic Properties and Applications, Pergamon, New York, 1975 Google Scholar