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Characterization of Au-Mediated a-Si:H Crystallization by In Situ Electrical Measurements

Published online by Cambridge University Press:  21 February 2011

A. A. Pasa ,
C. A. Achete ,
W. Losch  and
G. H. Bauer
A. A. Pasa
Affiliation:
Inst. f. Phys. Elektronik, Univ. Stuttgart, Pfaffenwaldring 47, D-7000 Stuttgart, FRG
C. A. Achete
Affiliation:
LEMI/COPPE/Universidade Federal do Rio de Janeiro, C.P. 68505, 21945-970 Rio de Janeiro, RJ, Brazil
W. Losch
Affiliation:
LEMI/COPPE/Universidade Federal do Rio de Janeiro, C.P. 68505, 21945-970 Rio de Janeiro, RJ, Brazil
G. H. Bauer
Affiliation:
Inst. f. Phys. Elektronik, Univ. Stuttgart, Pfaffenwaldring 47, D-7000 Stuttgart, FRG
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Abstract

The Au-mediated crystallization of a-Si:H has been investigated by in situ electrical measurements and scanning electron microscopy. The a-Si:H structure was prepared by evaporation of Au thin films of different thicknesses (50 - 600 Å) onto intrinsic glow discharge deposited a-Si:H layers (≈ 5000 Å). A rapid increase in the electrical resistance was associated to the nucleation and growth of Si crystals inside the Au film. The growth process promotes the accumulation of Au at the Si grain boundaries forming a metallic network. This network controls the electric resistance at the end of the crystallization reaction. The kinetics of transformation has been studied by isothermal treatments over the 140 - 180 °C temperature range. An activation energy of 2.1 eV was measured. An analysis of resistance data obtained by constant heating rate treatments suggest the rupture of the network interconnections at T ≥ 170 °C. SEM pictures showing the formation of Au clusters confirmed this suggestion.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 311: Symposium O – Phase Transformations in Thin Films–Thermodynamics and Kinetics , 1993 , 105
Copyright
Copyright © Materials Research Society 1993

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References

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