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Characterization and Oxidation Kinetics of Reactively Sputtered Ti1−xAlxN Film

Published online by Cambridge University Press:  10 February 2011

Yoshiki Ishizuka ,
Dong Joo Kim ,
Stephen K. Streiffer  and
Angus I. Kingon
Yoshiki Ishizuka
Affiliation:
Dept. of Materials Science and Engineering, North Carolina State Univ., Raleigh, NC
Dong Joo Kim
Affiliation:
Dept. of Materials Science and Engineering, North Carolina State Univ., Raleigh, NC
Stephen K. Streiffer
Affiliation:
MSD 212 C212, Argonne National Laboratory, Argonne, IL
Angus I. Kingon
Affiliation:
Dept. of Materials Science and Engineering, North Carolina State Univ., Raleigh, NC
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Abstract

We report on the use of Ti1−xAlxN as an electrically conductive barrier layer from the viewpoint of its oxidation kinetics and electrical properties. Auger electron spectroscopy depth profile analysis revealed the improvement of oxidation resistance with Al incorporation. At 650 °C, an oxygen diffusion coefficient and an activation energy of Ti0.47AI0.53N were determined to be 5.85×10−1 Å 2/sec and 2.51 eV respectively. Compared with TiN, this corresponds to an oxide gowth rate reduction of about two orders of magnitude. An Al-rich oxide layer, which gew near the Ti1−XAlxN surface, is believed to act as a passivation layer to oxidation. Furthermore, current-voltage characteristics showed that the oxidation resistant Ti1−xAlxN minimized the increase of electrical resistance after heat treatment in an oxidizing atmosphere. These results suggest that Ti1−xAlxN is an attractive candidate for an electrically conductive barrier layer for advanced memory device applications.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 541: Symposium O – Ferroelectric Thin Films VII , 1998 , 191
Copyright
Copyright © Materials Research Society 1999

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References

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